ARM pitches tri-gate transistors for 20nm and beyond

According to a blog post by Jean Luc Pelloie, the company's Fellow Director of SOI Technology, 20 nm may represent an inflection point in which it will be necessary to transition from a metal-oxide semiconductor field-effect transistor (MOSFET) to Fin-Shaped Field Effect Transistors (FinFET) or 3D transistors, which Intel refers to as tri-gate designs that are set to debut with the company's 22 nm Ivy Bridge product generation.

2DayBlog.com, ARM pitches tri-gate transistors for 20nm and beyond